Flip-chip planar GaInAs/InP p-i-n photodiodes-fabrication andcharacteristics |
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Authors: | Makiuchi M Norimatsu M Sakurai C Kondo K Yamamoto N Yano M |
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Affiliation: | Fujitsu Labs. Ltd., Atsugi; |
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Abstract: | New flip-chip planar GaInAs/InP p-i-n photodiodes have been fabricated as an array. We describe the structure of the photodiode, the design of a microlens, the fabrication processes, characteristics, and the optical fiber-coupled modules. This photodiode satisfied the requirements for a small junction capacitance and low dark current, good optical fiber coupling, and easy fabrication. We obtained a low dark current with good reproducibility by using two layer polyimide and SiN passivation films. A microlens with a 50 μm φ to 120 μm φ aperture could easily be fabricated with an InP-substrate. By electroplating, flip-chip metal bumps were directly formed on the active region of the photodiode for the first time |
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