毫米波大动态宽带单片低噪声放大器

利用0.25μmGaAsPHEMT低噪声工艺,设计并制造了2种毫米波大动态宽带单片低噪声放大器。第1种为低增益大动态低噪声放大器,单电源+5V工作,测得在26～40GHz范围内,增益G=10±0.5dB,噪声系数NF≤2.2dB,1分贝压缩点输出功率P1dB≥15dBm;第2种为低压大动态低噪声放大器,工作电压为3.6V,静态电流0.6A(输出功率饱和时,动态直流电流约为0.9A),在28～35GHz范围内,测得增益G=14～17dB,噪声系数约4.0dB,1分贝压缩点输出功率P1dB≥24.5dBm,最大饱和输出功率≥26.8dBm,附加效率约10%～13.6%。结果中还给出了2种放大器直接级联的情况。

Millimeter Wave Large Dynamic Wide Band Monolithic Low Noise Amplifier

Two kinds of millimeter wideband MMIC large dynamic amplifiers were designed and fabricated with 0.25 μm GaAs low noise PHEMT technology.The first was a low gain large dynamic low noise amplifier,under single power supply+5 V with a gain of G=10±0.5 dB,a noise figure of less than 2.2 dB and an output power(-1 dB)of more than 15 dBm from frequency 26 GHz to 40 GHz.The second was a low voltage large dynamic amplifier biased at 3.6 V with a current of 0.6 A for small input signal and 0.9A at saturated output power,respectively.From 28～35 GHz,the amplifier achieved a power gain of 14～17 dB,a noise figure of 4.0 dB,an output power(-1 dB)of more than 24.5 dBm,a saturated output power of more than 26.8 dBm and a power added efficiency of 10%～13.6%.Finally,the two kinds of amplifiers were cascaded,its performances were also given.