Al-doped ZnO films by pulsed laser deposition at room temperature |
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Authors: | Yaodong Liu |
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Affiliation: | Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Nanling campus, Changchun, 130025, China |
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Abstract: | Polycrystalline Al-doped ZnO films with good photoluminescence property were successfully deposited on quartz glass substrates by pulsed laser deposition (PLD) at room temperature. The films were obtained by ablating a metallic target (Zn:Al 3 wt%) at various laser energy densities (1.0-2.1 J/cm2) in oxygen atmosphere (9 Pa). The structure of the films was characterized by XRD. Ultraviolet photoluminescence centered at 359-361 nm was observed in the room temperature PL spectra of the Al-doped ZnO films. |
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Keywords: | Al doped film Ultraviolet photoluminescence Pulsed laser deposition |
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