Study on ZnO thin films deposited on sol-gel grown ZnO buffer by RF magnetron sputtering |
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Authors: | Zhu Xingwen Li Yongqiang Lu Ye Li Yingwei Xia Yiben |
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Affiliation: | School of Materials Science and Engineering, Shanghai University, 149 Yanchang Road, Shanghai 200072, China |
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Abstract: | ZnO thin films with preferential C-orientation and dense microstructure have been prepared using RF magnetron sputtering method by the insertion of a sol-gel grown ZnO buffer layer. The XRD results show that the C-orientation of the film deposited on ZnO buffer is obviously better than that deposited directly on lime-glass substrate. With an increase of the RF power from 100 to 380 W, C-orientation of the films with ZnO buffer improves and the grain size increases. When the RF power equals 550 W, the orientation of the film changes to (1 0 0) and the grain size decreases. The crystalline and microstructure quality of the films can be improved after annealing, however, the grain size is not much dependent on the annealing temperature in the range of 560-610 °C. |
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Keywords: | RF magnetron sputtering Zinc compounds Buffer layer X-ray diffraction C-orientation |
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