Optical band gap and optical constants in amorphous Se96−xTe4Agx thin films |
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Authors: | AA Al-Ghamdi |
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Affiliation: | Department of Physics, King AbdulAziz University, Jeddah, Saudi Arabia, P.B. 80203, Jeddah 21589, Saudi Arabia |
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Abstract: | The optical constants (absorption coefficient (α), refractive index (n), extinction coefficient (k), real and imaginary part of dielectric constant) have been studied for a-Se96−xTe4Agx (where x=0, 4, 8, 12) thin films as a function of photon energy in the wavelength range (500-1000 nm). It has been found that the optical band gap increases while n and k decreases on incorporation of Ag in Se-Te system. The value of α and k increases, while the value of n decreases with incident photon energy. The results are interpreted in terms of the change in concentration of localized states due to the shift in fermi level. A correlation between the optical band gap and electronegativity of the alloys indicates that the optical band gap increases with the decrease of electronegativity. |
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Keywords: | Optical band gap Amorphous semiconductors Chalcogenide glasses |
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