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一种基于外部特性的晶体管电路模型的构建方法
引用本文:王萍 路志英 史婷娜 林孔元. 一种基于外部特性的晶体管电路模型的构建方法[J]. 电气电子教学学报, 2005, 27(5): 34-37
作者姓名:王萍 路志英 史婷娜 林孔元
作者单位:天津大学电气与自动化工程学院,天津300072
摘    要:晶体管外部特性是指输入侧电压与电流间的关系和输出侧电压与电流间的关系.对晶体管放大电路中的晶体管输入/输出端口及其外部电路的电压-电流间关系进行图解分析,得到解的数学描述,再对微变增量用微分量代替,从而获得晶体管端口电压电流间的线性描述.使用基尔霍夫电压定律及电流定律对该线性描述进行解读之后,选用线性电阻、恒压源和受控电流源作适当连接,形成与解读结果相一致的反映放大电路中晶体管端口实际变量关系的电路模型.用于晶体管放大电路静态分析和动态分析的晶体管电路模型是这一模型的特殊情况.

关 键 词:晶体管  外部特性  电路模型
文章编号:1008-0686(2005)05-0034-04
收稿时间:2005-07-18
修稿时间:2005-10-10

A Method to Structure Circuit Models for Transistor Based on the Ports' V-I Characteristics
WANG Ping,LU Zhi-ying,SHI Ting-na,LIN Kong-yuan ,. A Method to Structure Circuit Models for Transistor Based on the Ports' V-I Characteristics[J]. Journal of Electrical & Electronic Engineering Education, 2005, 27(5): 34-37
Authors:WANG Ping  LU Zhi-ying  SHI Ting-na  LIN Kong-yuan   
Affiliation:School of Electrical Automation Engineering, Tainjin University, Tianjin 300072, China
Abstract:Outer characteristics of transistor are the relationship between the input/output ports' voltages and currents.There are two dependences on the input(output) port of the transistor in a transistor amplifier circuit,which describe the port-character of the transistor and its outer circuit respectively,and which are made use of diagrammatizing analysis to obtain mathematic expressions of the solution.Then increments of the voltages and currents are replaced by the corresponding differentials to make the expressions linear.After the linear expressions are interpreted by KVL and KCL,linear resistance,constant voltage source and controlled current source are connected to come into being the circuit models which accord with the interpreted results and reflects the relationship between the real variables on the ports.These circuit models also adapt to the static and dynamic analysis.
Keywords:transistor ~ out-characteristics    circuit model
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