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Gold-based gate-sinking enhanced by inhomogeneities in power MESFETs |
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| Authors: | Canali C. Donzelli G. Fantini F. Vanzi M. Paccagnella A. |
| Affiliation: | Università di Padova, Istituto di Elettrotecnica e di Elettronica, Padova, Italy; |
| Abstract: | Gate contact degradation of power MESFETs with gold-based gate metallisations is enhanced by local inhomogeneities, such as thermal gradients and border effects. |
| Keywords: | |