| 高压gg-LDMOS在ESD应力条件下的热特性研究 |
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| 引用本文： | 孙伟锋,钱钦松,王雯,易扬波.高压gg-LDMOS在ESD应力条件下的热特性研究[J].半导体学报,2009,30(10):104004-3. |
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| 作者姓名： | 孙伟锋 钱钦松 王雯 易扬波 |
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| 作者单位： | National ASIC System Engineering Research Center;Southeast University; |
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| 摘 要： | The thermal characteristics of high voltage gg-LDMOS under ESD stress conditions are investigated in detail based on the Sentaurus process and device simulators.The total heat and lattice temperature distributions along the Si–SiO2 interface under different stress conditions are presented and the physical mechanisms are discussed in detail.The influence of structure parameters on peak lattice temperature is also discussed,which is useful for designers to optimize the parameters of LDMSO for better ESD performance.
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| 关 键 词： | LDMOS 应力条件 高压 基础 防静电 热特征 胁迫条件 结构参数 |
| 收稿时间： | 4/3/2009 2:28:59 AM |
Thermal characteristics investigation of high voltage grounded gate-LDMOS under ESD stress conditions |
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| Sun Weifeng,Qian Qinsong,Wang Wen and Yi Yangbo.Thermal characteristics investigation of high voltage grounded gate-LDMOS under ESD stress conditions[J].Chinese Journal of Semiconductors,2009,30(10):104004-3. |
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| Authors: | Sun Weifeng Qian Qinsong Wang Wen and Yi Yangbo |
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| Affiliation: | National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China |
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| Abstract: | thermal characteristic gg-LDMOS ESD stress condition |
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| Keywords: | thermal characteristic gg-LDMOS ESD stress condition |
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