Linear antenna microwave plasma CVD deposition of diamond films over large areas |
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Authors: | A Kromka O BabchenkoT Izak K HruskaB Rezek |
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Affiliation: | Institute of Physics AS CR, v.v.i., Cukrovarnicka 10, CZ-16253 Praha 6, Czech Republic |
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Abstract: | Diamond thin films were grown by linear antenna microwave plasma CVD process over large areas (up to 20 × 10 cm2) from a hydrogen based gas mixture. The influence of the gas composition (H2, CH4, CO2) and total gas pressure (0.1 and 2 mbar) on the film growth is presented. For CH4/H2 gas mixtures, the surface crystal size does not show dependence on the methane concentration and total pressure and remains below 50 nm as observed by SEM. Adding CO2 (up to 10%) significantly improves the growth rate. However, still no significant change of morphology is observed on films grown at 2 mbar. The crucial improvement of the diamond film purity (as detected by Raman spectroscopy) and crystal size is found for deposition at 0.1 mbar. In this case, crystals are as large as 500 nm and the growth rate increases up to 38 nm/h. |
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Keywords: | Nanocrystalline diamond Large area growth Plasma enhanced CVD Raman spectroscopy SEM |
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