Rate constant for CO insertion in the hydroformylation of ethene on Rh/SiO2 as determined by pulse surface reaction rate analysis |
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| Authors: | Yoshihiko Mori Toshiaki Mori Tadashi Hattori Yuichi Murakami |
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| Affiliation: | (1) Department of Applied Chemistry, School of Engineering, Nagoya University, Chikusa-ku, 464 Nagoya, Japan;(2) Government Industrial Research Institute, Nagoya, Hirate-cho, Kita-ku, 462 Nagoya, Japan |
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| Abstract: | A new method of pulse surface reaction rate analysis (PSRA) was proposed for determining the rate constant of the step of CO insertion in ethene hydroformylation. On pulsing ethene onto Rh/SiO2 via the continuous flow of a mixture of CO and H2, propanal was found to be produced gradually. It is revealed here that rate analysis of the dynamic behavior of produced propanal allows the determination of the rate constant for CO insertion. The effect of metal carbonate and oxides, added to the catalyst, on CO insertion was discussed in terms of the rate constant determined. |
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| Keywords: | CO hydrogenation CO insertion hydroformylation pulse reaction rate constant Rh/SiO2 |
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