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AlGaAs/GaAs multiquantum-well (MQW) surface-emitting laser |
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| Authors: | Uenohara H Koyama F Iga K |
| Affiliation: | Tokyo Inst. of Technol., Yokohama, Japan; |
| Abstract: | In the letter the lasing characteristics of a multiquantum-well surface-emitting injection laser with 100 wells at 77 K under pulsed condition is reported. The output light of the device was linearly polarised.< |
| Keywords: | |