注氟MOSFET的质子辐照效应

对干Ｏ２和Ｈ２＋Ｏ２栅氧化注Ｆ的Ｓｉ栅Ｐ沟和Ｎ沟ＭＯＳＦＥＴ进行了８ＭｅＶ和１２ＭｅＶ质子辐照试验，通过分析阈电压和Ｌｄｓ－Ｖｇｓ亚阈特性的辐射响应，发现ＭＯＳ结构栅介质中Ｆ的引入能明显抑制辐射感生氧化物电荷的积累和Ｓｉ／ＳｉＯ２界面态的产生，导致ＰＭＯＳＦＥＴ较小的阈电压负向漂移和ＮＭＯＳＦＥＴ阈电正向回漂，且不受质子辐照能量的影响。

Proton irradiation effects of fluorinated MOSFFTs

Proton radiation responses of Si gate P and N channel fluorinated MOSFETs processed with H2+ O2 and dry O2 gate oxidation have been investigated. The data on threshold voltage and Ids-Vgs characteristics show that the radiation-induced oxide charges and interface stales can be restrained. The formation of Si-F bonds to substitute some weak bonds and strained bonds which easily become charge traps under irradiation and the relaxation of the Si/SiO2 interface stress by F atoms are considered to explain the experimental result.