| Abstract: | This paper presents a new technique in the high dielectric constant composite oxide film preparation.On the basis of nanocompsite high dielectric constant aluminum oxide film growth technology, a new idea of adulterating Si oxide species into the aluminum composite film was proposed. As a result, the specific capacitance and withstanding voltage of the composite oxide film formed at the anodizing voltage of 20V are enhanced, and the leakage current of the aluminum composite oxide film is reduced through incorporation of Si oxide species. |
