| 提取IGBT外延层载流子寿命的新方法 |
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| 引用本文： | 袁寿财,朱长纯.提取IGBT外延层载流子寿命的新方法[J].微电子学与计算机,2002,19(12):59-64. |
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| 作者姓名： | 袁寿财 朱长纯 |
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| 作者单位： | 西安交通大学,西安,710049 |
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| 基金项目： | SponsoredbytheNationalScienceFoundation(No.60036016,50077016)andpartiallysuportedbytheDoctoralFoundationofEducationcommitteeofP.R.China(No.CETD00-10). |
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| 摘 要： | 文章提出了一种基于IGBT等效电路模型及其I-V特性曲线拟合提取IGBT低掺杂外延层载流子寿命的新方法。文中的IGBT模型运用精确的双极输运理论而不是其它文献报到的准静态条件假设,通过压控电阻模型准确描述IGBT高阻厚外延层的电导调制效应,取得了很好的效果。该模型完全与SPICE应用程序兼容,可以精确算出IGBT输出I-V特性及载流子寿命等参数。
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| 关 键 词： | IGBT 外延层 载流子寿命 等效电路模型 |
A New Method of Extraction Carrier Lifetime for IGBT n- Layers |
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| YUAN Shou-cai ZHU Chang-chun Xi''''an Jiaotong University.A New Method of Extraction Carrier Lifetime for IGBT n- Layers[J].Microelectronics & Computer,2002,19(12):59-64. |
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| Authors: | YUAN Shou-cai ZHU Chang-chun Xi'an Jiaotong University |
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| Affiliation: | Xi'an71004 9 |
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| Abstract: | In this article,a new method of extraction carrier lifetime for IGBT n^-layers has been proposed based on an IGBT subcircuit model includes a detailed ambipolar transport analysis of bipolar transistor portion and does not assume the quasi_static conditions.The IGBT n^- layer conductivity modulated resistor is effectively equivalent by a VCR(Voltage Controlled Resistor),the model is fully sipice compatible and can be used to accurately predict the IGBT I-V characteristics,carrier lifetime etc. |
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| Keywords: | Carrier Lifetime Extraction IGBT Subcircuit Spice |
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