High-speed InGaAlAs/InAlAs multiple quantum well optical modulators |
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| Authors: | Wakita K Kotaka I Mitomi O Asai H Kawamura Y Naganuma M |
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| Affiliation: | NTT Opto-Electron. Lab., Kanagawa; |
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| Abstract: | High-speed modulation over 22 GHz for waveguided InGaAlAs/InAlAs multiple quantum well (MQW) optical modulators is described. A large on/off ratio of over 25 dB is demonstrated with a low-drive voltage (6 V) operating in the 1.55-μm wavelength region. The design and characteristics of MQW p-i-n modulators are discussed. The causes of large-insertion loss and the required drive voltage bandwidth figure of merit for the MQW modulator are discussed. The frequency response measurements show that the response speed is limited by the RC time constant of the device. This suggests that the speed can be further enhanced by decreasing the size and capacitance of the device |
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