The effect of growth parameters on CrN thin films grown by molecular beam epitaxy |
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| Authors: | Y.H. Liu Kangkang WangWenzhi Lin Abhijit ChinchoreMeng Shi Jeongihm PakA.R. Smith Costel Constantin |
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| Affiliation: | a Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, OH 45701, USAb Department of Physics and Astronomy, James Madison University, 901 Carrier Drive, Harrisonburg, VA 22807, USA |
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| Abstract: | In this paper, we report on the controlling of the effect of growth parameters such as substrate temperature and the ratio of Cr and N atoms on phase formation, surface morphology and crystallization of CrN(001) thin films grown by plasma-assisted molecular beam epitaxy on the MgO(001) substrate. The reflection high energy electron diffraction, atomic force microscopy, X-ray diffraction and scanning tunneling microscopy are used to characterize the thin films grown under various conditions. High-quality CrN(001) thin films are achieved at a substrate temperature 430 °C with a low Cr deposition rate. |
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| Keywords: | Chromium nitride Crystalline orientation Thin films Molecular beam epitaxy Scanning tunneling microscopy Reflection high energy electron diffraction X-ray diffraction |
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