β-Si3N4Whiskers Embedded in Oxynitride Glasses: Interfacial Microstructure

Interfacial microstructures in βP-Si₃N₄( w )-Si-Al-Y-O-N-glass systems were investigated by systematically varying the nitrogen content and the Al:Y ratio of the glass matrix. High-resolution and analytical transmission electron microscopy (HREM and AEM) studies revealed that the interfacial microstructure is a function of the glass composition. No interfacial phases were formed in glasses with low Al:Y ratios and in glasses with high Al:Y ratios and low nitrogen content, whereas epitaxial growth of an interfacial layer (100–200 μm thick) on the βP-Si₃N₄( w ) occurred in a glass matrix with high Al:Y ratio and high nitrogen content. The interfacial layer was identified to be a β'-SiAION phase. Interfaces containing the SiAION layer exhibited high debonding energy compared to Si₃N₄( w )–glass interfaces. HREM studies indicated that the lattice-mismatch strain in the SiAION layer was relieved by dislocation formation at the SiAION–Si₃N₄( w ) interface. The difference in interfacial debonding energy was, hence, attributed to the local atomic structure and bonding between the glass-β-Si₃N₄ and the glass–β'-SiAION phases. This observation was clear evidence of the strong influence of glass chemistry on the interfacial debonding behavior by altering the interfacial microstructure.