| AlGaN MSM紫外探测器 |
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| 引用本文： | 成彩晶,鲁正雄,司俊杰,陈志忠,张国义,孙维国.AlGaN MSM紫外探测器[J].红外,2006,27(5):7-9. |
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| 作者姓名： | 成彩晶 鲁正雄 司俊杰 陈志忠 张国义 孙维国 |
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| 作者单位： | 中国空空导弹研究院,洛阳,471009;北京大学物理系,北京,100871 |
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| 摘 要： | 用通过MOCVD生长的未掺杂的n-Al0．3Ga0．7N制备了金属-半导体-金属 (MSM)结构紫外探测器。器件在2．5V偏压时的暗电流为1pA,在6．5V偏压时的暗电流为1nA．在1V偏压下和298nm波长处,探测器的电流响应率为0.038A／W,在300nm 波长处有陡峭的截止边,这与文献中介绍的AlxGa1-xN探测器在x=0．3时截止波长为 300nm相一致。
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| 关 键 词： | MSM 暗电流 响应率 光谱响应 |
| 文章编号： | 1672-8785（2006）05-0007-03 |
| 收稿时间： | 2005-11-08 |
| 修稿时间： | 2005年11月8日 |
AlGaN MSM UV Photodetector |
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| CHENG Cai-jing,LU Zheng-xing,SI Jun-jie,CHEN Zhi-zhong,ZHANG Guo-yi,SUN Wei-guo.AlGaN MSM UV Photodetector[J].Infrared,2006,27(5):7-9. |
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| Authors: | CHENG Cai-jing LU Zheng-xing SI Jun-jie CHEN Zhi-zhong ZHANG Guo-yi SUN Wei-guo |
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| Affiliation: | 1. China Airborne Missile Academy, Luoyang 471009, China; 2. Physics Department of Beijing University, Beijing 100871, China |
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| Abstract: | A Metal-Semiconductor-Metal (MSM) ultraviolet photodetector was fabricated on the un-doped n-Al0.3Ga0.7N grown by Metal-Organic Chemical Vapor Deposition (MOCVD). The detector exhibited a sharp cutoff at the wavelength of 300nm, which was in accordance with the band gap of Al0.3Ga0.7N. It had dark currents of 1pA and 1nA at the biases of 2.5V and 6.5V respectively and had a responsivity of 0.038A/W at the bias of 1V and at the wavelength of 298nm. |
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| Keywords: | MSM dark current responsivity photoreponse |
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