| TiN薄膜的循环制备和电学性质 |
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| 引用本文： | 易万兵,张文杰,吴瑾,邹世昌.TiN薄膜的循环制备和电学性质[J].材料研究学报,2006,20(2):213-216. |
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| 作者姓名： | 易万兵 张文杰 吴瑾 邹世昌 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所,上海,200050;上海宏力半导体制造有限公司,上海,201203;中国科学院研究生院,北京,100039;上海宏力半导体制造有限公司,上海,201203;中国科学院上海微系统与信息技术研究所,上海,200050;上海宏力半导体制造有限公司,上海,201203 |
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| 摘 要： | 用金属有机物化学气相淀积（Metal Organic Chemical Vapor Deposition，MOCVD）制备了TiN薄膜，通过不同循环制备的、厚度相同的平面薄膜电阻率的比较研究了TiN薄膜的电学性质．结果表明，多次循环会引入界面而增大电阻率，与薄膜成分和微结构分析的结果一致．得到了单循环的最优厚度以使样品电阻率最低．通过相同循环、不同厚度样品在真实器件中电学性能的比较，发现介窗（Via）直径越小，TiN薄膜对介窗电阻的影响越大．
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| 关 键 词： | 金属材料 TiN MOCVD 等离子体处理 薄膜电阻 |
| 文章编号： | 1005-3093(2006)02-0213-04 |
| 收稿时间： | 07 11 2005 12:00AM |
| 修稿时间： | 01 16 2006 12:00AM |
Preparation and electrical properties of MOCVD TiN thin films |
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| YI Wanbing,ZHANG Wenjie,WU Jin,ZOU Shichang.Preparation and electrical properties of MOCVD TiN thin films[J].Chinese Journal of Materials Research,2006,20(2):213-216. |
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| Authors: | YI Wanbing ZHANG Wenjie WU Jin ZOU Shichang |
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| Affiliation: | 1.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 ; 2. Grace Semiconductor Manufacturing Corporation, Shanghai 201203 ; 3.Graduate School of Chinese Academy of Sciences, Beijing 100039 |
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| Abstract: | TiN films was prepared by metal organic chemical vapor deposition (MOCVD) with different processes on blanket films and the electrical properties was investigated.The results showed that a process of multiple cycles was supposed to introduce extra interfaces,which significantly increases film resistivity.This was proved by compositional and micro structural analysis.An optimum thickness for a single cycle,which results in the lowest film resistivity,was also validated.Furthermore,it was found that the impact of TiN films on Via resistance is greater when the Via size is smaller. |
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| Keywords: | TiN MOCVD |
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