| 用固溶强化模型计算InP中等价电子杂质对位错的钉扎力 |
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| 引用本文： | 叶式中,杨保华.用固溶强化模型计算InP中等价电子杂质对位错的钉扎力[J].半导体学报,1988,9(2):150-155. |
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| 作者姓名： | 叶式中 杨保华 |
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| 作者单位： | 中国科学院半导体研究所 北京
(叶式中)，中国科学院半导体研究所 北京(杨保华) |
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| 摘 要： | 本文根据固溶强化模型,考虑了等价电子杂质在InP单晶中的溶解度以及掺入杂质与基质原子之间共价半径之差引起的弹性失配.计算了这些杂质在InP 中对位错的钉扎力可达10~9～10~(10)达因/厘米~2,从而很好地解释了等价电子杂质降低位错密度的作用.
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| 关 键 词： | InP 等电子杂质 固溶强化 钉扎力 |
Calculation of Dislocation Pinning Forces in InP with Isovalent Impurities by Solid Solution Hardening Model |
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| Ye Shizhong/Institute of Semiconductors,Academia Sinica,BeijingYang Baohua/Institute of Semiconductors,Academia Sinica,Beijing.Calculation of Dislocation Pinning Forces in InP with Isovalent Impurities by Solid Solution Hardening Model[J].Chinese Journal of Semiconductors,1988,9(2):150-155. |
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| Authors: | Ye Shizhong/Institute of Semiconductors Academia Sinica BeijingYang Baohua/Institute of Semiconductors Academia Sinica Beijing |
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| Abstract: | On the basis of a solid solution hardening model,the authors have considered the solu-bility of isovalent impurities in InP and the elastic misfit arised from the differences of thetetrahedral radii between added impurities and host atoms.For isovalent impurities in InP,the pinning forces as large as 10~8-10~(10) dynes/cm~3 have been calculated.Thus, the reductionin dislocation density in InP single crystals doped with isovalent impurities can well be ex-plained. |
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| Keywords: | InP Isoelectronic impurities Solid solution hardening Pinning force |
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