| CaCu_3Ti_4O_(12)陶瓷的巨介电响应机理 |
| |
| 引用本文： | 郑兴华,张程,刘馨,汤德平,肖娟.CaCu_3Ti_4O_(12)陶瓷的巨介电响应机理[J].中国有色金属学报,2011,21(3). |
| |
| 作者姓名： | 郑兴华 张程 刘馨 汤德平 肖娟 |
| |
| 作者单位： | 福州大学材料科学与工程学院,福州,350108 |
| |
| 基金项目： | 福建省高等学校新世纪优秀人才支持计划资助项目(XSJRC2007-16); 福建省发改委资助项目(827014) |
| |
| 摘 要： | 针对CaCu3Ti4O12(CCTO)陶瓷的巨介电性起源存在较大争议的情况,以少量MnO2取代CCTO中CuO或TiO2、采用固相反应法烧结制备名义成分为CaCu3-xMnxTi4O12(x=0~0.3)和CaCu3Ti4-yMnyO12(y=0~0.1)的陶瓷。通过微结构和电性能的演变讨论CCTO陶瓷的巨介电响应机理。结果表明:加入少量MnO2后,所有陶瓷均为体心立方(BCC)类钙钛矿结构的CCTO单相;但是,CCTO陶瓷显微结构从异常长大的晶粒转变成均匀的细小晶粒;同时,CCTO陶瓷的电阻率从107-.cm显著提高到109-.cm;介电常数从104显著下降到102;介电损耗从10-1急剧降低到10-3;CCTO陶瓷的巨介电响应是由半导体化的晶界/亚晶界和相对绝缘的晶粒/亚晶粒组成的内部阻挡层电容器(IBLC)所致。在较低温度下(<1 100℃)烧结获得高介电常数、低损耗和温度稳定的CCTO基陶瓷,找到一种降低CCTO陶瓷介电损耗的有效方法。
|
| 关 键 词： | CaCu3Ti4O12陶瓷 巨介电常数 内部阻挡层电容器(IBLC) 低介电损耗 |
Mechanism of giant dielectric response of CaCu_3Ti_4O_(12) ceramics |
| |
| ZHENG Xing-hua,ZHANG Cheng,LIU Xin,TANG De-ping,XIAO Juan.Mechanism of giant dielectric response of CaCu_3Ti_4O_(12) ceramics[J].The Chinese Journal of Nonferrous Metals,2011,21(3). |
| |
| Authors: | ZHENG Xing-hua ZHANG Cheng LIU Xin TANG De-ping XIAO Juan |
| |
| Affiliation: | ZHENG Xing-hua,ZHANG Cheng,LIU Xin,TANG De-ping,XIAO Juan(College of Materials Science and Engineering,Fuzhou University,Fuzhou 350108,China) |
| |
| Abstract: | According to the debate on the origin of the giant permittivity of CaCu3Ti4O12(CCTO) ceramics,a small amount of MnO2 substitution for CuO or TiO2 was adopted to prepare the ceramics with nominal composition of CaCu3-xMnxTi4O12(x=0-0.3) or CaCu3Ti4-yMnyO12(y=0-0.1) by solid-state reaction method.The mechanism of giant dielectric response in CCTO ceramics was discussed in view of microstructure evolution and variation of electric properties.The results show that CCTO ceramics with a small amount of MnO2 subst... |
| |
| Keywords: | CaCu3Ti4O12 ceramics giant dielectric constant internal barrier layer capacitor(IBLC) low dielectric loss |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
