SF6/O2气氛中SiC ICP刻蚀的微沟槽效应

本文采用SF6 + O2作为刻蚀气体，对单晶6H-SiC 材料的感应耦合等离子体( ICP) 刻蚀工艺进行了研究。着重分析了ICP 功率、偏置电压、气体混合比等工艺参数对微沟槽效应的影响。结果表明，O2的加入对于微沟槽的形成起到了极其重要的作用，微沟槽是加入氧气后形成的SiFxOy中间层的充电造成的。ICP功率与偏置电压的增大会增强微沟槽效应，进一步促进微沟槽的形成，另外入射离子的角度分布也会影响微沟槽的形成.

Microtrenching effect of SiC ICP etching in SF6/O2 plasma

Inductively coupled plasma (ICP) etching of single crystal 6H-silicon carbide (SiC) is investigated using oxygen (O-added sulfur hexafluoride (SF plasmas. The relations between the microtrenching effect and ICP coil power, the composition of the etch gases and different bias voltages are discussed. Experimental results show that the microtrench is caused by the formation of a SiFO layer, which has a greater tendency to charge than SiC, after the addition of O. The microtrenching effect tends to increase as the ICP coil power and bias voltage increase. In addition, the angular distribution of the incident ions and radicals also affects the shape of the microtrench.