Rough ZnO layers by LP-CVD process and their effect in improving performances of amorphous and microcrystalline silicon solar cells |
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Authors: | S Faÿ L Feitknecht R Schlüchter U Kroll E Vallat-Sauvain A Shah |
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Affiliation: | aInstitut de Microtechnique (IMT), Rue A.-L. Breguet 2, 2000 Neuchâtel, Switzerland |
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Abstract: | Doped ZnO layers deposited by low-pressure chemical vapour deposition technique have been studied for their use as transparent contact layers for thin-film silicon solar cells.Surface roughness of these ZnO layers is related to their light-scattering capability; this is shown to be of prime importance to enhance the current generation in thin-film silicon solar cells. Surface roughness has been tuned over a large range of values, by varying thickness and/or doping concentration of the ZnO layers.A method is proposed to optimize the light-scattering capacity of ZnO layers, and the incorporation of these layers as front transparent conductive oxides for p–i–n thin-film microcrystalline silicon solar cells is studied. |
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Keywords: | TCO LP-CVD Zinc oxide Thin-film silicon solar cells Light-scattering capacity |
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