| 具有互补电荷岛结构的PSOI高压器件 |
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| 引用本文： | 吴丽娟,胡盛东,张波,李肇基.具有互补电荷岛结构的PSOI高压器件[J].半导体学报,2011,32(1):014003-5. |
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| 作者姓名： | 吴丽娟 胡盛东 张波 李肇基 |
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| 作者单位： | 电子科技大学;电子科技大学;电子科技大学;电子科技大学 |
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| 摘 要： | 本文提出一种新的具有互补n+-电荷岛结构的PSOI高压器件（CNCI PSOI）。该结构在PSOI器件介质层上下界面分别注入形成一系列等距的高浓度n+区。器件外加高压时，在上下介质层的n+-区域之间形成互补的空穴和电子岛,因此能有效的增强界面电场(EI) 和提高耐压(BV)，通过源下的硅窗口还能减小器件的自热效应。本文分析了CNCI PSOI 的垂直界面电场的模型，分析结果和二维仿真结果吻合。CNCI PSOI LDMOS 在较低的自热效应的情况下，BV 和EI从常规PSOI的 216V 和81.4V/μm 提高到591V 和512 V/μm。文中详细研究了结构参数对所提出的器件性能的影响。
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| 关 键 词： | 高压器件 器件结构 SOI 互补 岛屿 BV公司 电场分析 LDMOS |
| 收稿时间： | 7/1/2010 9:49:56 PM |
| 修稿时间： | 8/8/2010 9:45:10 AM |
Complementary charge islands structure for a high voltage device of partial-SOI |
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| Wu Lijuan,Hu Shengdong,Zhang Bo and Li Zhaoji.Complementary charge islands structure for a high voltage device of partial-SOI[J].Chinese Journal of Semiconductors,2011,32(1):014003-5. |
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| Authors: | Wu Lijuan Hu Shengdong Zhang Bo and Li Zhaoji |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; College of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, Chin;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; College of Communication Engineering, Chongqing University, Chongqing 400044, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | |
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| Keywords: | PSOI complementary charge islands breakdown voltage SHE |
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