Multilevel memory using single-electron turnstile |
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| Authors: | Nishiguchi K Inokawa H Ono Y Fujiwara A Takahashi Y |
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| Affiliation: | NTT Basic Res. Labs., NTT Corp., Atsugi Kanagawa, Japan; |
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| Abstract: | A multilevel single-electron memory has been successfully demonstrated. Two fine gates with phase-shifted pulse voltages modulate potential barriers in a one-dimensional Si channel to transfer electrons one by one into a memory node, and the number of electrons in the node is sensed by a single-electron transistor. |
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