| 铁电电容的电极结构 |
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| 引用本文： | 姜国宝,黄维宁,汤庭鳌. 铁电电容的电极结构[J]. 固体电子学研究与进展, 2000, 20(3): 330-333 |
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| 作者姓名： | 姜国宝 黄维宁 汤庭鳌 |
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| 作者单位： | 复旦大学电子工程系,上海,200433 |
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| 基金项目： | 国家自然科学基金项目!(编号 6 9876 0 0 8)，应用材料 (AM)基金，“86 3”项目，上海应用物理中心基金 |
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| 摘 要： | 作为铁电电容的电极材料 ,铂是使用最为广泛的金属。在 PZT薄膜的上下两层分别用离子束溅射淀积厚度为 50 nm和 10 0 nm的 Pt。在铂层上按常规工艺需蒸发 1～ 2 μm的 Al作为布线金属。为避免在热处理过程中的固相反应 ,Al/ Pt之间还需嵌入阻挡金属。观察了 Si,Co,Ni,Ti和 Ti/ W合金膜的阻挡特性。实验证明一定组分的 Ti/ W合金膜能有效地抑制 Al/ Pt固相反应 ,获得较为理想的接触特性。
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| 关 键 词： | 电极 铁电电容 固相反应 阻挡金属 |
| 文章编号： | 1000-3819(2000)03-0330-04 |
| 修稿时间： | 1999-02-04 |
The Electrode Structure for Ferroelectric Capacitors |
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| Jiang Guobao,Huang Weining,Tang Tingao. The Electrode Structure for Ferroelectric Capacitors[J]. Research & Progress of Solid State Electronics, 2000, 20(3): 330-333 |
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| Authors: | Jiang Guobao Huang Weining Tang Tingao |
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| Affiliation: | Jiang Guobao,Huang Weining,Tang Tingao(Dept. of Electronic Eng. , Fudan Univ. , Shanghai, 200433, CHN) |
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| Abstract: | Pt has been widely used for the electrode materials of ferroelectric capacitors. Pt thin film was deposited on the top and bottom of the ferroelectric PZT film by ion beam sputtering, the thicknesses are 50nm and 100nm respectively. As interconnect layer, 1~2 μm Al must be deposited on the Pt. To avoid the solid phase reaction between Al/Pt, a barrier metal must be inserted. The barrier effect of Si, Co, Ni, Ti and Ti/W alloy film was observed in this paper. Experiments show that Ti/W alloy film can efficiently constrain Al/Pt solid phase reaction to obtain good contact properties. |
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| Keywords: | electrode ferroelectric capacitor solid phase reaction barrier metal |
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