Degradation and annealing of amorphous silicon solar cells by current injection: experiment and modeling |
| |
Authors: | Domenico Caputo |
| |
Affiliation: | Department of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Rome, Italy |
| |
Abstract: | In this paper we report in detail on the effect of current injection in amorphous silicon solar cells. A set of devices has been degraded and then annealed at different current intensities. Device performances during the whole experiment have been monitored by current–voltage characteristics and quantum efficiency curves. It has been found that annealing rate increases with current intensity, while stabilized photovoltaic parameters decrease. Time evolution of efficiency and short-circuit current during degradation has been reproduced by a numerical device modeling, resulting in a pronounced increase of defects near the p–i interface. The model also demonstrated that annealing results are not well reproduced if current-induced annealing is not energy selective. |
| |
Keywords: | Amorphous silicon Solar cells Current injection Degradation Annealing |
本文献已被 ScienceDirect 等数据库收录! |