| 高功率GaAs/GaAlAs单量子阱远结激光器 |
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| 引用本文： | 石家纬,张素梅,齐丽云,胡贵军,李红岩,李永军,刘建军,张锋刚.高功率GaAs/GaAlAs单量子阱远结激光器[J].功能材料与器件学报,2000,6(3):240-242. |
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| 作者姓名： | 石家纬 张素梅 齐丽云 胡贵军 李红岩 李永军 刘建军 张锋刚 |
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| 作者单位： | 吉林大学电子工程系,集成光电子国家重点实验室吉林大学实验区,长春130023 |
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| 基金项目： | 省科委基础研究项目!（19990526－1） |
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| 摘 要： | 通过对５０余只８０８ｎｍ的ＧａＡｓ／ＧａＡｌＡｓ高功率单量子阱远结半导体激光器的老化实验观测，在老化初期（前５２０ｈ），阈值电流随老化时间的延长而下降，下降幅度高达５７ｍＡ，从１０００ｈ多的恒流电老化结果可以看出，器件的输出光功率在老化初期有所上升，随后，表现出按指数规律缓慢下降的行为。初步实验结果表明器件具有长寿命的潜力。
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| 关 键 词： | 高功率 单量子阱 结半导体激光器 GaAs／GaAlAs |
| 修稿时间： | : |
High power GaAs/GaAlAs single quantum well remote junction lasers |
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| SHI Jia-wei,ZHANG Su-mei,QI Li-yun,HU Gui-jun,LI Hong-yan,LI Yong-jun,LIU Jian-jun,ZHANG Feng-gang.High power GaAs/GaAlAs single quantum well remote junction lasers[J].Journal of Functional Materials and Devices,2000,6(3):240-242. |
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| Authors: | SHI Jia-wei ZHANG Su-mei QI Li-yun HU Gui-jun LI Hong-yan LI Yong-jun LIU Jian-jun ZHANG Feng-gang |
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| Abstract: | More than 50 GaAs/GaAlAs High Power Single Quantum Well Semiconductor Lasers are aged. The threshold current decreases during the early aging (first 520 h) and the largest decrease is 57 mA. From the aging result of more than 1000 h at constant current, we find that output power increases during the early aging , and then decay slowly according to exponent law. All results prove that the devices have potential of long lifetime. |
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| Keywords: | High power Single quantum well Remote junction semiconductor laser Aging |
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