| 用离子注入在GaAs中形成高浓度超薄有源层 |
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| 引用本文： | 颜本达,史常忻,忻尚衡,周文英.用离子注入在GaAs中形成高浓度超薄有源层[J].半导体学报,1988,9(3):308-311. |
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| 作者姓名： | 颜本达 史常忻 忻尚衡 周文英 |
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| 作者单位： | 上海交通大学LSI实验中心，中国科学院上海冶金研究所离子束开放实验室，中国科学院上海冶金研究所离子束开放实验室，中国科学院上海冶金研究所离子束开放实验室 上海，上海，上海 |
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| 摘 要： | 高浓度浅结是高速砷化镓MESFET的重要技术.我们采用透过氮化硅薄膜进行Si离子注入的方法研制了载流子浓度大于10~(15)cm~(-3)的薄形有源层(<1000A).试验结果表明,氮化硅膜的厚度基本等于载流子浓度峰值位置向衬底表面移动的距离;高剂量(>10~(15)cm~(-2)),低能量,(<80keV)和较厚的氮化硅可以制得符合要求的薄形有源层.
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| 关 键 词： | 砷化镓 离子注入 浅结 快速退火 |
Preparation of Extra-Thin Channel with High Carrier Concentration in GaAs by Si Ion Implantation through SiN Film |
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| Yan Benda/Shanghai Jiao Tong University,LSI Center,Shanghai.Preparation of Extra-Thin Channel with High Carrier Concentration in GaAs by Si Ion Implantation through SiN Film[J].Chinese Journal of Semiconductors,1988,9(3):308-311. |
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| Authors: | Yan Benda/Shanghai Jiao Tong University LSI Center Shanghai |
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| Affiliation: | Yan Benda/Shanghai Jiao Tong University,LSI Center,Shanghai,Shanghai Institute of Metallurgy,Ion Beam Laboratory,ShanghaiShi Changxin/Shanghai Jiao Tong University,LSI Center,Shanghai,Shanghai Institute of Metallurgy,Ion Beam Laboratory,ShanghaiXin Shangheng/Shanghai Jiao Tong University,LSI Center,Shanghai,Shanghai Institute of Metallurgy,Ion Beam Laboratory,ShanghaiZhou Wenying/Shanghai Jiao Tong University,LSI Center,Shanghai,Shanghai Institute of Metallurgy,Ion Beam Laboratory,Shanghai |
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| Abstract: | Shallow junction with high carrier concentration is important for high speed MESFET.By using Si ion implantation through SiN film,very thin junctions (<1000 A) with carrierconcentrations of>10~(13)cm~(-3) have been prepared.High doses of Si,>10~(13)cm~(-3),and mode-rate energy,80 keV, were found to be suitable.The thickness of the SiN approximately equalsthe displacement of the carrier concentration peak towards the surface of the wafer. |
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| Keywords: | Gallium arsenide Ion implantation Shallow junction Rapid thermalannealing |
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