沉积和退火温度对多晶ZnO薄膜结构特性的影响

采用RF反应溅射法在Si（111）衬底上制备出了沿C轴高度取向的多晶ZnO薄膜。通过对ZnO薄膜的X射线衍射（XRD）分析，研究了沉积温度及退火对多晶ZnO薄膜取向性、晶粒大小和应力的影响。结果表明，衬底温度和退火温度对多晶ZnO薄膜的晶体结构影响显著。适当的提高衬底温度或适当的增加退火温度都能有效地改善ZnO薄膜的结构特性，但增加退火温度更有优势。同时原子力显微镜观察表明，退火能有效地降低ZnO薄膜的表面粗糙程度。

Influence of deposition condition and post-treatment on the structural characteristics of ZnO films prepared by reactive sputtering

Highly oriented polycrystalline ZnO films were prepared on Si wafer by RF reactive sputtering technique. X-ray diffraction (XRD) was employed to analyze the influence of the substrate temperature and the annealing temperature on the structural characteristies of ZnO films.The results show that the structure of the films are improved with the increase of T_s and annealing temperature up to appropriate point. The surface morphology of the films was investigated using atomic force microscope (AFM).It is found that the surface roughness of the films is decreased after annealing treatment.