Measurement of erosion yields for a SiC surface on H+, D+ and Ar+ bombardment

Changes in the distribution of silicon solute in a 99.8% pure nickel crystal after 75 keV Ni⁺ ion bombardment at 16°C and 500°C, are reported. The concentration depth profiles were measured by simultaneous sputter-profiling and secondary ion mass spectrometry (SIMS). At 16°C the results are satisfactorily explained by the formation and subsequent migration to sinks of nickel interstitial-silicon complexes. The same mechanisms can be used to explain the results obtained at 500°C but the effect observed could also be due to the migration of vacancy-silicon complexes to sinks and the possibility that both mechanisms occur simultaneously cannot be ruled out.