AlGaN solar-blind APD with low breakdown voltage |
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| Kexiu Dong, Dunjun Chen, Yangyi Zhang, et al. AlGaN solar-blind APD with low breakdown voltage[J]. Opto-Electronic Engineering, 2017, 44(4): 405-409. doi: 10.3969/j.issn.1003-501X.2017.04.004 |
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| Authors: | Kexiu Dong Dunjun Chen Yangyi Zhang Yizhe Sun Jianping Shi |
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| Affiliation: | 1. School of Electronic and Electrical Engineering, Chuzhou University, Chuzhou 239000, China; 2. College of Physics and Electronic Information, Anhui Normal University, Wuhu 241000, China; 3. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China |
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| Abstract: | A p-i-i-n type AlGaN heterostructure avalanche photodiodes (APDs) is proposed to decrease the avalanche breakdown voltage and to realize higher gain by using high-Al-content AlGaN layer as multiplication layer and low-Al-content AlGaN layer as absorption layer. The calculated results show that the designed APD can significantly reduce the breakdown voltage by almost 30%, and about sevenfold increase of maximum gain compared to the conventional AlGaN APD. The noise in designed APD is also less than that in conventional APD due to its low dark current at the breakdown voltage point. Moreover, the one-dimensional (1D) dual-periodic photonic crystal (PC) with anti-reflection coating filter is designed to achieve the solar-blind characteristic and cutoff wavelength of 282 nm is obtained. |
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| Keywords: | AlGaN avalanche photodiodes solar-blind |
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