Current-gain cutoff frequency comparison of InGaAs HEMTs |
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| Authors: | Hikosaka K. Sasa S. Harada N. Kuroda S. |
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| Affiliation: | Fujitsu Lab. Ltd., Atsugi; |
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| Abstract: | The current-gain cutoff frequency performance of pseudomorphic InGaAs/AlGaAs (20% InAs composition) high-electron-mobility transistors (HEMTs) on GaAs is compared to that of lattice-matched InGaAs/InAlAs HEMTs on InP. The current-gain cutoff frequency (ft) characteristics as a function of gate length (Lg) indicate that the ft-Lg product of ~26 GHz-μm in InGaAs/InAlAs HEMTs is 23% higher than that of ~21 GHz-μm in InGaAs/AlGaAs HEMTs. The performance of InGaAs/AlGaAs HEMTs is also 46% higher than that of conventional GaAs/AlGaAs HEMTs (~18 GHz-μm). These data are very useful in improving the device performance of HEMTs for a given gate length |
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