Analysis of charges and surface states at the interfaces of semiconductor-insulator-semiconductor structures |
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Authors: | L. S. Berman E. I. Belyakova L. S. Kostina E. D. Kim S. C. Kim |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia;(2) Korea Electrotechnology Research Institute, Republic of Korea |
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Abstract: | A method for determining the energy spectrum of charges and surface-state densities at the interfaces of semiconductor-insulator-semiconductor structures was developed; the method is based on the analysis of capacitance-voltage characteristics. The method was experimentally tested with Si-SiO2-Si structures prepared by direct bonding of both mirror-polished smooth wafers and wafers with a regular mesoscopic relief pattern at the inner surface of the wafers to be bonded. The density of surface states is lower at the surfaces with a regular relief pattern than that at the surfaces without the surface relief. |
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