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GaAs/GaAlAs光双稳激光器稳态及动态特性的实验研究
引用本文:王启明,吴荣汉,赵建和,刘文旭,张权生. GaAs/GaAlAs光双稳激光器稳态及动态特性的实验研究[J]. 半导体学报, 1990, 11(1): 28-34
作者姓名:王启明  吴荣汉  赵建和  刘文旭  张权生
作者单位:中国科学院半导体所 北京(王启明,吴荣汉,赵建和,刘文旭),中国科学院半导体所 北京(张权生)
摘    要:本文报道了GaAs/GaAlAs侧向增益波导限制双稳激光器的静态及动态实验结果,对L—1特性,通态模式竞争、延迟特性、张弛振荡、有脉动、混沌现象等进行了研究,并对结果进行了讨论。实验表明,对于双区共腔双稳激光器,由于腔内可饱和吸收体的存在,使得其稳态及动态特性比普通均匀注入激光器复杂,与之有关的物理研究尚待进一步开展。

关 键 词:半导体激光器 双稳态 动态特性

Experimental Investigation of Static and Dynamic Characteristics in a GaAs/GaAlAs Common Cavity Two Sections (CCTS) Bistable Laser
WANG Qiming/Institute of Semiconductors,Academia Sinica,BeijingWU Ronghan/Institute of Semiconductors,Academia Sinica,BeijingZHAO Jianhe/Institute of Semiconductors,Academia Sinica,BeijingLIU Wenxu/Institute of Semiconductors,Academia Sinica,BeijingZHANG Quansheng/Institute of Semiconductors,Academia Sinica,Beijing. Experimental Investigation of Static and Dynamic Characteristics in a GaAs/GaAlAs Common Cavity Two Sections (CCTS) Bistable Laser[J]. Chinese Journal of Semiconductors, 1990, 11(1): 28-34
Authors:WANG Qiming/Institute of Semiconductors  Academia Sinica  BeijingWU Ronghan/Institute of Semiconductors  Academia Sinica  BeijingZHAO Jianhe/Institute of Semiconductors  Academia Sinica  BeijingLIU Wenxu/Institute of Semiconductors  Academia Sinica  BeijingZHANG Quansheng/Institute of Semiconductors  Academia Sinica  Beijing
Abstract:The static and dynamic characteristics of a GaAs/GaAlAs bistable laser with lateral gainwaveguide confinement, including L-I charateristics, mode competition during switching on,long delay, ultrafast light pulse, self-sustained pulsation, chaos etc., are reported and discussed.It shows that for a CCTS laser with a saturable absorbor in the cavity, the dynamic andstatic characteristics behave more complicated in comparison with that of a normal uniform injectionlaser, which demand a further analysis theoretically.
Keywords:Semiconductor laser  Optical  bistability  Chaos phenomena  
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