Electrical measurement of the junction temperature of an RF powertransistor |
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Authors: | Cain B.M. Goud P.A. Englefield C.G. |
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Affiliation: | Telecommun. Res. Lab., Edmonton, Alta.; |
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Abstract: | An enhanced electrical method is presented for measuring the average junction temperature of an RF bipolar transistor. A two-step procedure, previously developed for DC operation, is extended to include the junction temperature measurement for an RF power transistor in a tuned amplifier circuit. The measurement technique is convenient, since it can be used with normal, packaged devices, and does not require a complex heat flow model or ambient temperature measurements |
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