| 超临界干燥多孔硅的光致发光 |
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| 引用本文： | 张波,王珏.超临界干燥多孔硅的光致发光[J].半导体光电,1995,16(4):355-359. |
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| 作者姓名： | 张波 王珏 |
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| 作者单位： | 同济大学物理系 |
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| 摘 要： | 对两种不同条件下制备的多孔硅进行了红外透射光谱测量，并对超临界干燥和自然干燥条件下的光致发光光谱进行了对比测量。用高分辨率透射电镜对其结构进行了观察，研究表明多孔硅的发光机理与其制备条件有关。
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| 关 键 词： | 特性测量 多孔硅 光致发光 |
Photoluminescence of porous silicon prepared by supercritical drying |
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| ZHANG Po,WANG Jue,ZHOU Bin,WU Xiang.Photoluminescence of porous silicon prepared by supercritical drying[J].Semiconductor Optoelectronics,1995,16(4):355-359. |
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| Authors: | ZHANG Po WANG Jue ZHOU Bin WU Xiang |
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| Abstract: | The anodized porous silicon layers formed in two kinds of HF solution are respectively dried in supercritical vessel and in ambient air. The luminescence mechanism is studied using Fourier infrared transmission (FIT)photoluminescence(PL)spectroscope associated with transmission electronic microscope (TEM). Experimental results indicate that the luminescence mechanism varies with forming conditions. |
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| Keywords: | Semiconductor Materials Characteristics Measurement Porous Silicon Photoluminescence |
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