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Interfacial properties and characterization of Sc/Si multilayers |
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| Authors: | TN Shendruk A Moewes P Ochin J-M André K Le Guen P Jonnard |
| Affiliation: | a Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK, Canada S7N 5E2 b Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 620041 Yekaterinburg, Russia c ICMPE Institut de Chimie et Matériaux Paris Est, CNRS-Université Paris XII UMR 7182, 2-8 rue Henri Dunant F-94320 Thiais, France d Laboratoire de Chimie Physique-Matiére et Rayonnement, UPMC Univ Paris 06, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05, France e CNRS-UMR 7614, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05, France |
| Abstract: | We investigate the intermixing of layers in Sc/Si and Sc/B4C/Si/B4C multilayers using electron and synchrotron excited soft X-ray emission and absorption spectroscopy. The multilayers are annealed at 100, 200, 300, 400 and 500 °C after preparation by magnetron sputtering. Silicon Kβ emission and reflectivity measurements verify that the non-annealed multilayer systems are composed of distinct layers with only a minor interdiffusion in Sc/Si samples whereas annealing Sc/Si multilayers at 400 °C leads to a degradation of the multilayer structure and the formation of intermittent scandium silicide, ScSi. The presence of B4C barriers in Sc/B4C/Si/B4C hinders this degradation from developing for the entire temperature range considered. The barrier layers continue to be effective for the entire temperature range even after an extended shelf-life. |
| Keywords: | Multilayers Extreme ultraviolet optics Diffusion barriers Scandiumsilicon Intermixing X-ray absorption spectroscopy X-ray emission spectroscopy |
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