High-rate reactive deposition of transparent SiO2 films containing low amount of Zr from molten magnetron target |
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Authors: | Jindrich Musil Vaclav Satava |
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Affiliation: | a Department of Physics, Faculty of Applied Sciences, University of West Bohemia, Univerzitni 22, 306 14 Plzen, Czech Republicb Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Praha 8, Czech Republic |
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Abstract: | The paper reports on a reactive deposition of transparent SiO2 films with a low amount (≤ 3 at.%) of Zr prepared from the molten target using the AC pulsed dual magnetron. It is shown that the deposition rate aD of the transparent oxide film strongly increases at the critical target power density (Wt)cr when the solid target starts to melt and the magnetron operates with a molten target. In this case, the evaporation of target material plays a dominant role in the reactive deposition of thin films. This process is called the ionized magnetron evaporation. Oxide films reactively deposited from the molten target are well transparent and highly elastic. The maximum deposition rate of the transparent oxide film achieved in our experiments is 814 nm/min. |
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Keywords: | Sputtering Evaporation Reactive deposition Target power density Molten target Deposition rate Thin films |
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