Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells |
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Authors: | Taketomo Sato Naoki Yoshizawa Tamotsu Hashizume |
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Affiliation: | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo, 060-8628, Japan |
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Abstract: | Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared ranges. Porous samples were electrochemically prepared on which 130-nm-diameter nanopores were formed in a straight, vertical direction and were laterally separated by 50-nm-thick InP nanowalls. The reflectance strongly depended on the surface morphology. The lowest reflectance of 0.1% in the visible light range was obtained after the irregular top layer had been completely removed. Superior photoelectrochemical properties were obtained on the InP porous structures due to two unique features: the large surface area inside pores, and the large photon absorption enhanced on the low reflectance surface. |
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Keywords: | Indium phosphide Porous structure Surface reflectance Photoelectrochemical solar cell |
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