High aspect ratio contact hole etching using relatively transparent amorphous carbon hard mask deposited from propylene |
| |
Authors: | Ching-Yuan Ho X.J. Lin Chenhsin Lien |
| |
Affiliation: | a Department of Mechanical Engineering, Chung Yuan Christian University, Taiwan b Powerchip Semiconductor Corp., No. 12, Li-Hsin 1st Rd. Hsinchu Science Park, Hsinchu 300, Taiwan c Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan |
| |
Abstract: | In this study, a high aspect ratio contact pattern, beyond 70 nm technology, in a very-large-scale integrated circuit, was achieved using hydrogenated amorphous carbon (a-C:H) film as the dry etching hard mask. The effect of temperature on the a-C:H deposits prepared by plasma enhanced chemical vapor deposition was studied. The a-C:H films resulting from propylene (C3H6) decomposition exhibited high transparency incorporated rich hydrogen concentration with a decreasing deposition temperature. A matrix of dispersed cross-linked sp3 clusters in a-C:H films, which has an increasing optical band gap and higher hydrogen content, is attributed to reduce the defect density of status and obtain high transmittance rate. Moreover, the higher transparency of a-C:H films could afford lithographic aligned capability as well as compressive stress and dry etching resistance. These explorations provided insights into the role of hydrogen in a-C film and also into the practicality of its future nano-scale device applications. |
| |
Keywords: | Hydrogenated amorphous carbon High aspect ratio contact Lithography |
本文献已被 ScienceDirect 等数据库收录! |
|