Epitaxial Ni films for ballistic ferromagnetic nanostructures |
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| Authors: | IV Malikov LA Fomin VYu Vinnichenko GM Mikhailov |
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| Affiliation: | Institute of Microelectronic Technology and High Purity Materials, Russian Academy of Sciences, Institutskaya 6, Chernogolovka, 142432, Russia |
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| Abstract: | Nickel films of 170 nm thick were grown on sapphire substrates of the A, R and C orientations. Their electric characteristics and surface morphology were studied. Peculiarities of the film growth and optimum growth conditions for films of high electron mobility were determined. Nickel films grown on the sapphire A-plane with a high residual electron mean free path were found suitable for the fabrication of ballistic planar ferromagnetic nanostructures. Ballistic electron transport was observed in cross-type epitaxial Ni (111) nanostructures. |
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| Keywords: | Thin films Growth mechanism Nickel Ballistic electron transport Bend magnetoresistance Surface morphology |
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