Comparison of p-channel transistors based on α,ω-hexyl-distyryl-bithiophene prepared using various film deposition methods |
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Authors: | Y Didane M Barret P Collot F Fages N Yoshimoto C Videlot-Ackermann |
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Affiliation: | a Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), CNRS-UPR-3118, Aix Marseille Université, Campus Luminy, Case 913, 13288 Marseille Cedex 09, France b Département Packaging et Supports Souples — Centre de Microélectronique de Provence, Ecole Nationale Supérieure des Mines de Saint Etienne, 13541 Gardanne, France c Department of Materials Science and Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551, Japan |
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Abstract: | We present a series of organic thin film transistor (OTFT) devices realized by vacuum evaporation, spin-coating, drop casting and inkjet printing and a comparative analysis of their electrical response/behavior obtained under identical measurement conditions. A small molecule, α,ω-hexyl-distyryl-bithiophene DH-DS2T, was used as a hole transporting active layer. Structure and morphology of thin films have been studied by atomic force microscopy, X-ray diffraction and optical microscopy. Different parameters linked directly to the processes (solvent, concentration, deposition method, surface, post-treatment…) are identified as key factors controlling film quality/crystallinity and device performances. This systematic study reveals the factors that limit efficient charge transport at the macroscopic scale of the channel length in OTFT devices. |
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Keywords: | Organic semiconductor Thin film X-ray diffraction Optical microscopy Morphology Transport |
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