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Characteristics of n-type ZnO nanorods on top of p-type poly(3-hexylthiophene) heterojunction by solution-based growth |
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| Authors: | Chun-Yu Lee Sheng-Hao Hsu Ching-Fuh Lin |
| Affiliation: | a Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan b Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan c Graduate Institute of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan d Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan e Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan f Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan |
| Abstract: | We report that ZnO nanorods (NRs) are grown on an organic layer of poly(3-hexylthiophene) (P3HT) using a modified seeding layer. Thus, ZnO NRs/P3HT heterojunction light-emitting diodes could be fabricated using the hydrothermal method, in which ZnO acts as an n-type material and P3HT as a p-type material. The ZnO NRs improve the electron transportation in the devices. A three-fold enhancement of current density of the device is observed due to the NRs formed on the P3HT. The electroluminescence (EL) of the optimized ZnO-based device is 1.5 times larger than that without NRs. The influence of the P3HT thickness for the EL spectrum is also discussed. |
| Keywords: | ZnO Nanorods P3HT Electroluminescence p-n junction Hydrothermal method Spin coating FESEM XRD |
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