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Tunable properties of wide-band gap p-type BaCu(Ch1  xChx′)F (Ch = S, Se, Te) thin-film solid solutions
Authors:A. Zakutayev  R. Kykyneshi  C.-H. Park  J. Tate
Affiliation:a Department of Physics, Oregon State University, Corvallis, OR 97331-6507, USA
b Department of Chemistry, Oregon State University, Corvallis, OR 97331-6507, USA
Abstract:Thin-film solid solutions of BaCu(Ch1 − xChx′)F (Ch, Ch′ = S, Se, or Te) wide-band gap p-type semiconductors are obtained by pulsed laser deposition at elevated substrate temperatures from alternating layers of BaCuChF and BaCuCh′F. Adjusting the thickness of the component layers varies the relative chalcogen content, which allows tunability of the film transparency and results in a conductivity change of more than three orders of magnitude. The tunability of the physical properties makes these chalcogen-based semiconductors potentially useful for optoelectronics applications. Lattice parameters of BaCuChF calculated using density functional theory agree with those previously reported for the powders. Deviations from Vegard's law are observed in BaCu(S1  xSex)F thin films with large sulfur content.
Keywords:p-Type transparent conductor   Wide-band gap semiconductor   Mixed-anion compound   BaCuSF   BaCuSeF   BaCuTeF   Pulsed laser deposition   1111 compounds
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