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X-ray diffraction analysis of thermally-induced stress relaxation in ZnO films deposited by magnetron sputtering on (100) Si substrates |
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| Authors: | F. Conchon P.O. Renault E. Le Bourhis E. Barthel E. Gouardes R. Gy J. Jupille |
| Affiliation: | a Laboratoire de Physique des Matériaux (PHYMAT) UMR 6630, Université de Poitiers, 86962 Futuroscope-Chasseneuil, France b Laboratoire de Surface du Verre et Interfaces (SVI), UMR 125, 93303 Aubervilliers, France c Laboratoire de Recherche de Saint-Gobain (SGR), 93303 Aubervilliers, France d Institut des Nanosciences de Paris (INSP), UMR 7588, 75015 Paris, France e Laboratoire de Physique des Solides (LPS), UMR 8502, 91405 Orsay, France |
| Abstract: | Residual stresses in sputtered ZnO films on Si are determined and discussed. By means of X-ray diffraction, we show that as-deposited ZnO films are highly compressively stressed. Moreover, a transition of stress is observed as a function of the post-deposition annealing temperature. After an 800 °C annealing, ZnO films are tensily stressed while ZnO films encapsulated by Si3N4 are stress-free. With the aid of in-situ X-ray diffraction under ambient and argon atmosphere, we argue that this thermally activated stress relaxation may be attributed to a variation of the stoichiometry of the ZnO films. |
| Keywords: | Zinc oxide Magnetron sputtering X-ray diffraction Residual stresses |
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