Growth of 3C-SiC on Si(111) using the four-step non-cooling process |
| |
Authors: | Jui-Min Liu J Hwang C-F Huang Li Chang |
| |
Affiliation: | a Department of Materials Science and Engineering, National Tsing Hua University, Hsin-Chu City, Taiwan, ROC b Department of Electrical Engineering, National Tsing Hua University, Hsin-Chu City, Taiwan, ROC c Department of Materials Science and Engineering, National Chiao Tung University, Hsin-Chu City, Taiwan, ROC |
| |
Abstract: | A modified four-step method was applied to grow a 3C-SiC thin film of high quality on the off-axis 1.5° Si(111) substrate in a mixed gas of C3H8, SiH4 and H2 using low pressure chemical vapor deposition. The modified four-step method adds a diffusion step after the carburization step and removes the cooling from the traditional three-step method (clean, carburization, and growth). The X-ray intensity of the 3C-SiC(111) peak is enhanced from 5 × 104 counts/s (the modified three steps) to 1.1 × 105 counts/s (the modified four steps). The better crystal quality of 3C-SiC is confirmed by the X-ray rocking curves of 3C-SiC(111). 3C-SiC is epitaxially grown on Si(111) supported by the selected area electron diffraction patterns taken at the 3C-SiC/Si(111) interface. Some {111} stacking faults and twins appear inside the 3C-SiC, which may result from the stress induced in the 3C-SiC thin film due to lattice mismatch. The diffusion step plays roles in enhancing the formation of Si-C bonds and in reducing the void density at the 3C-SiC/Si(111) interface. |
| |
Keywords: | Silicon carbide Low pressure chemical vapor deposition X-ray diffraction Crystal microstructure |
本文献已被 ScienceDirect 等数据库收录! |
|