Growth of M-plane GaN on (100) LiGaO2 by plasma-assisted molecular beam epitaxy |
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| Authors: | R. Schuber D.M. Schaadt |
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| Affiliation: | a Institute for Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
b Department of Materials Science and Opto-electronic Engineering, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC |
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| Abstract: | Growth of M-plane GaN on (100) LiGaO2 was achieved using plasma-assisted molecular beam epitaxy. Thermal annealing of the LiGaO2 wafer was found to lead to a substrate surface suitable for growth. Structural and morphological analysis was performed using x-ray and reflective high energy electron diffraction, scanning electron and atomic force microscopy. X-ray diffraction results show very high phase purity and a relaxation state of the GaN film close to 80%. The surface morphology, showing characteristic M-plane streaks, is flat and smooth. |
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| Keywords: | Molecular beam epitaxy Gallium nitride Lithium gallium oxide Non-Polar nitrides Crystal structure |
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