Study of carbide-forming element interlayers for diamond nucleation and growth on silicon and WC-Co substrates |
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| Authors: | Y. Tang Y.S. Li A. Hirose |
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| Affiliation: | a Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, Canada SK S7N 5A9b Plasma Physics Laboratory, University of Saskatchewan, 116 Science Place, Saskatoon, Canada SK S7N 5E2 |
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| Abstract: | Diamond nucleation and growth on several typical carbide-forming elements (CFE) (Ti, Cr and W) coated Si and WC-Co substrates were studied. The ion beam sputtered CFE interlayers show an amorphous/nanocrystalline microstructure. The diamond formed on the CFE coated substrates shows higher nucleation density and rate and finer grain structure than on uncoated substrates. Consequently, nanocrystalline diamond thin films can be formed on the CFE coated substrates under conventional microcrystalline diamond growth conditions. Among the three tested CFE interlayers, diamond has the highest nucleation density and rate on W layer and the lowest on Ti layer. The diamond nucleation density and rate on CFE coated WC-Co are much higher than those on widely used metal nitride coated WC-Co. |
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| Keywords: | Chemical vapor deposition Diamond nucleation and growth Interlayer Carbide forming element |
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