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Film morphology modification in ion-assisted glancing angle deposition
Authors:J.B. Sorge  M.J. Brett
Affiliation:
  • a Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB T6G 2V4, Canada
  • b NRC National Institute for Nanotechnology, Edmonton, AB T6G 2M9, Canada
  • Abstract:Porous structured films grown with the glancing angle deposition technique have been widely studied for thin film optical device applications. We report the use of ion assistance to modify the structural and optical properties of porous silicon dioxide and titanium dioxide columnar thin films grown at deposition angles of 70° and 85°. Optical characterization studies show that tilted columnar structures will undergo an increase in tilt angle and film density with increasing ion dose. These two trends contrast with unassisted films where film density and column tilt angle are primarily controlled by the deposition angle. Thus, a regime of film structures simultaneously exhibiting high film density and large column tilt angle is enabled by incorporating an ion-assisted process. The phisweep substrate motion algorithm for minimizing columnar anisotropy used in conjunction with ion-assisted deposition provides additional control over film morphology and expands the utility of this modified fabrication process.
    Keywords:Thin films   Optical properties   Titanium dioxide   Silicon dioxide
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